Straddling SnSe<sub>2</sub>/SnS<sub>2</sub> van der Waals tunneling heterostructures for high performance broadband photodetectors
Xiangna Cong, Muhammad Najeeb Ullah Shah, Wenlong He
Abstract
A SnSe 2 /SnS 2 /h-BN/graphene vdW tunneling device is fabricated with a high on/off ratio of more than 10 7 . Direct tunneling is the dominant mechanism at the gate voltage of 1 V.
Topics & Concepts
Materials sciencePhotodetectorHeterojunctionQuantum tunnellingBroadbandvan der Waals forceOptoelectronicsCondensed matter physicsPhysicsOpticsQuantum mechanicsMolecule2D Materials and ApplicationsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties