Litcius/Paper detail

Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

Jiho Ryu, Fayyaz Hussain, Chandreswar Mahata, Muhammad Ismail, Yawar Abbas, Min‐Hwi Kim, Changhwan Choi, Byung-Gook Park, Sungjun Kim

2020Applied Surface Science73 citationsDOI

Topics & Concepts

ElectroformingMemristorNeuromorphic engineeringMaterials scienceOptoelectronicsNon-volatile memoryMNIST databaseSynaptic weightNeural facilitationComputer scienceElectronic engineeringNanotechnologyArtificial neural networkLong-term potentiationChemistryLayer (electronics)EngineeringBiochemistryReceptorMachine learningAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringCCD and CMOS Imaging Sensors
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices | Litcius