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Design, photoelectric properties and electron transition mechanism of Cr doped p-CuGaS2 compound based on intermediate band effect

Yanlai Wang, Yingying Yang, Ligang Wang, Vignesh Murugadoss, Duo Pan, Huan Xia, Zhanhu Guo

2021Materials Today Physics16 citationsDOI

Topics & Concepts

DopingMaterials scienceBand gapPhotoelectric effectAnalytical Chemistry (journal)Electronic band structurePhotocurrentAbsorption spectroscopyX-ray photoelectron spectroscopyUltraviolet photoelectron spectroscopyChalcopyriteElectron holeSemimetalQuasi Fermi levelElectronOptoelectronicsChemistryOpticsCondensed matter physicsCopperNuclear magnetic resonancePhysicsMetallurgyChromatographyQuantum mechanicsChalcogenide Semiconductor Thin FilmsCopper-based nanomaterials and applicationsZnO doping and properties
Design, photoelectric properties and electron transition mechanism of Cr doped p-CuGaS2 compound based on intermediate band effect | Litcius