Top-Gated P-MOSFET with CVD-Grown WSe<sub>2</sub> Channels via Self-Aligned WO<sub><i>x</i></sub> Conversion for Spacer Doping
M F Li, Terry Y.T. Hung, Wei‐Sheng Yun, D. Mahaveer Sathaiya, Sui-An Chou, San Lin Liew, Ying-Mei Yang, Kuang‐I Lin, Tung-Ying Lee, Chao-Ching Cheng, Chung-Cheng Wu, Iuliana Radu, Minn‐Tsong Lin
Abstract
High Resolution Image Download MS PowerPoint Slide WO x conversion for doping is highlighted in recent advancements in WSe 2 p-FETs. While past studies focused on exfoliated WSe 2 flakes, our research examines CVD-grown WSe 2 films, assessing the impact of this doping on channel mobility and contact resistance in devices. Our approach enables effective threshold voltage tuning in both n- and p-type FETs with various low-dimensional material channels with the doping mechanism well captured by TCAD simulations. When applied to WSe 2, trilayer devices exhibited a good and comparable median field-effect mobility of 65 cm 2 /V·s following the conversion process. Consequently, trilayer WSe 2 was used to demonstrate top-gated p-MOSFETs via self-aligned WO x conversion in the spacer region, achieving a 250-fold enhancement in the on-current while maintaining a subthreshold swing of 80 mV/dec. Our findings provide a comprehensive understanding of WO x conversion and its general applicability, paving the way for its use in future logic devices with low-dimensional materials.