Fabrication and Properties of nSi–pCdTe Heterojunctions
I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев, М. Б. Сапаева
Abstract
nSi–pCdTe heterostructures have been produced by growing a pCdTe layer on an nSi substrate using thermal evaporation in vacuum at a residual pressure of 10–3 Pa. We have studied the elemental concentration depth profiles across the pCdTe layer and obtained current–voltage curves and spectral characteristics of the nSi–pCdTe heterostructures.
Topics & Concepts
HeterojunctionFabricationEvaporationMaterials scienceLayer (electronics)Substrate (aquarium)Vacuum evaporationOptoelectronicsThermalNanotechnologyAnalytical Chemistry (journal)ChemistryThin filmPhysicsEnvironmental chemistryThermodynamicsGeologyMedicinePathologyAlternative medicineOceanographyChalcogenide Semiconductor Thin FilmsAdvanced Semiconductor Detectors and MaterialsAdvanced Thermoelectric Materials and Devices