Variability sources and reliability of 3D — FeFETs
Milan Pešić, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Kaliappan Muthukumar, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger
Abstract
Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper we develop the first comprehensive model of vertical Ferroelectric Field Effect Transistor, V-FeFET, to identify sources of variability, understand retention problems, and point a path to improving reliability and enabling high-density storage FE memories with extended endurance.
Topics & Concepts
Neuromorphic engineeringReliability (semiconductor)FerroelectricityTransistorComputer scienceDomain (mathematical analysis)Point (geometry)Non-volatile memoryCMOSBinary numberLogic gateMaterials scienceElectronic engineeringElectrical engineeringOptoelectronicsEngineeringPhysicsArtificial intelligenceArtificial neural networkMathematicsQuantum mechanicsDielectricGeometryArithmeticVoltagePower (physics)Mathematical analysisFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing