Architecture of a Long-Wavelength Visible–Light–Driven N-Doped WO<sub>3</sub>/BiVO<sub>4</sub> Heterojunction Structure for Highly Efficient Photoelectrochemical Water Splitting
Dong Li, Siyu Tian, Qiuhua Qian, Caiyun Gao, Hongfang Shen, Fei Han
Abstract
A nitrogen-doped tungsten oxide/BiVO 4 (N-WO 3 /BiVO 4 ) heterojunction structure was obtained utilizing ammonium paratungstate as the nitrogen source and Bi(NO 3 ) 3 ·5H 2 O as the bismuth source, exhibiting promising photoelectrochemical (PEC) performances and effectively obtaining a long photoresponse range into the visible light region. Notably, the UV–vis diffuse reflectance spectra of N-WO 3 /BiVO 4 (566 nm, 2.19 eV) exhibited a notable red shift of the absorption edge compared to that of WO 3 /BiVO 4 (516 nm, 2.47 eV). The N-WO 3 /BiVO 4 photoanode demonstrated an excellent photocurrent density of 0.78 mA cm –2 at 0.68 V vs Ag/AgCl, which surpassed those of the WO 3 /BiVO 4 (0.20 mA cm –2 ), pure WO 3 (0.25 mA cm –2 ), and pure BiVO 4 (0.03 mA cm –2 ) photoelectrodes. The improvement of the PEC performances was primarily due to the synergy of N doping and the involved heterojunction structure, suggesting that N doping increased the Vis-light response and the heterojunction structure promoted charge separation to improve the lifetime of photoinduced carriers.