Ultrastable Crystalline Semiconducting Hydrogenated Borophene
Chuang Hou, Guòan Tai, Jinqian Hao, Lihang Sheng, Bo Liu, Zitong Wu
Abstract
Abstract Borophene sheets have been synthesized in recent experiments, but the metallic nature and structural instability of the sheets seriously prevent emerging applications. Hydrogenated borophene has been predicted as an ideal material for nanoelectronic applications due to its high stability as well as excellent electronic and mechanical properties. However, the fabrication of hydrogenated borophene is still a great challenge. Here, we demonstrate that hydrogenated borophenes in large quantities can be prepared without any metal substrates by a stepwise in‐situ thermal decomposition of sodium borohydride under hydrogen as the carrier gas. The borophenes with good crystallinity exhibit superior stability in strong acid or base solvents. The structure of the grown borophene is in good agreement with the predicted semiconducting α‐boron sheet. A fabricated borophene‐based memory device shows a high ON/OFF‐current ratio of 3×10 3 and a low operating voltage of less than 0.35 V as well as good stability.