Investigating the degradation behaviours of n+-doped Poly-Si passivation layers: An outlook on long-term stability and accelerated recovery
Daniel Chen, Chukwuka Madumelu, Moonyong Kim, Bruno Vicari Stefani, Anastasia Soeriyadi, Di Kang, Hang Cheong Sio, Xinyu Zhang, Peng Zhu, Brett Hallam, Matthew Wright
Topics & Concepts
PassivationDegradation (telecommunications)Annealing (glass)Materials scienceDopingOxideSiliconAnalytical Chemistry (journal)Chemical engineeringOptoelectronicsChemistryComposite materialLayer (electronics)MetallurgyElectronic engineeringEnvironmental chemistryEngineeringSilicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence