300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling
K. Maxey, Carl H. Naylor, K. P. O'Brien, Ashish Verma Penumatcha, A. Oni, Charles C. Mokhtarzadeh, C. J. Dorow, Carly Rogan, B. Holybee, Tristan A. Tronic, Dominique Adams, N. Arefin, Arnab Sen Gupta, Charlie Lin, T. Zhong, S. Lee, A. Kitamura, Robert Bristol, Scott B. Clendenning, Uygar E. Avci, M. Metz
Abstract
Two-dimensional (2D) materials have garnered significant attention in the past decade as a crucial enabler for "More Moore" scaling. Here we demonstrate and characterize metallo-organic chemical vapor deposition (MOCVD) of 2D materials directly on a 300 mm Si platform, including p-type WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for the first time. We establish process conditions for MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (M = Mo, W; X = S, Se) targeted for both BEOL- and FEOL-application spaces. FETs fabricated on 300 mm n-type MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> film show appreciable variability (σ/μ ~ 0.2) that in-creases with scaled geometry. Our as-deposited MOCVD WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> pMOS devices achieve a record I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> ~100 μA/μm. We also exhibit advancement in patterned convertible templating (PCT) that is ultimately compatible with 300 mm technologies.