The Influence of Driving Parameters on Conducted EMI for an IGBT Module
Huazhen Huang, Jialing Wu, Weihua Xu, Tiebing Lu
Abstract
Insulated gate bipolar transistor (IGBT) has been widely used in the voltage-source-converter-based high-voltage direct current (VSC-HVDC). However, the electromagnetic interference (EMI) generated by its fast switching process affects the normal operation of the surrounding power equipment. The switching voltage and current of IGBT are the main sources of EMI. Different driving circuit parameters result in different IGBT switching characteristics. In this article, the switching model of IGBT is introduced first and the influence of driving parameters on EMI sources is analyzed. Based on the conducted EMI experiment platform of an IGBT module, the time-domain waveforms of switching voltage and current under different driving parameters are obtained and compared with the model. Then the interference voltage spectrums are measured by an EMI receiver under different driving parameters. The influence of driving parameters on conducted EMI in 0.15-30 MHz is then analyzed and explained by combining the result of time domain and frequency domain. This article comprehensively analyzes the relationship between driving parameters and EMI sources and summarizes the influence characteristics of driving parameters on common-mode (CM) and differential-mode (DM) noise. The conclusions can help the parameters design of driving board, which can effectively reduce the conducted EMI of the converter.