Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers
Shuimei Ding, Chang Liu, Zhiwei Li, Zheyi Lu, Quanyang Tao, Donglin Lu, Yang Chen, Wei Tong, Liting Liu, Wanying Li, Likuan Ma, Xiaokun Yang, Zhaojing Xiao, Yiliu Wang, Lei Liao, Yuan Liu
Abstract
Two-dimensional (2D) semiconductors have generated considerable attention for high-performance electronics and optoelectronics. However, to date, it is still challenging to mechanically exfoliate large-area and continuous monolayers while retaining their intrinsic properties. Here, we report a simple dry exfoliation approach to produce large-scale and continuous 2D monolayers by using a Ag film as the peeling tape. Importantly, the conducting Ag layer could be converted into AgO x nanoparticles at low annealing temperature, directly decoupling the conducting Ag with the underlayer 2D monolayers without involving any solution or etching process. Electrical characterization of the monolayer MoS 2 transistor shows a decent carrier mobility of 42 cm 2 V –1 s –1 and on-state current of 142 μA/μm. Finally, a plasmonic enhancement photodetector could be simultaneously realized due to the direct formation of Ag nanoparticles arrays on MoS 2 monolayers, without complex approaches for nanoparticle synthesis and integration processes, demonstrating photoresponsivity and detectivity of 6.3 × 10 5 A/W and 2.3 × 10 13 Jones, respectively.