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Effect of 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA) on Cu/Ta chemical mechanical planarization (CMP) in the barrier layer: A novel complexing agent and the dual role on Cu

Ni Meng, Xianglong Zhang, Shunfan Xie, Xianghui Li, Shenao Nie, Yuxuan Qiu, Ying Wei, Junfeng Li, Ruhao Meng, Yangang He

2024Surfaces and Interfaces11 citationsDOI

Topics & Concepts

Chemical-mechanical planarizationMaterials scienceZeta potentialCopperSlurryTantalum carbideChemical engineeringTantalum nitrideBarrier layerCitric acidTantalumX-ray photoelectron spectroscopyChelationNuclear chemistrySolubilityLayer (electronics)Inorganic chemistryMetallurgyNanoparticleNanotechnologyComposite materialOrganic chemistryChemistryEngineeringAdvanced Surface Polishing TechniquesCopper Interconnects and ReliabilitySemiconductor materials and devices
Effect of 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA) on Cu/Ta chemical mechanical planarization (CMP) in the barrier layer: A novel complexing agent and the dual role on Cu | Litcius