Ultrahigh‐Speed In‐Memory Electronics Enabled by Proximity‐Oxidation‐Evolved Metal Oxide Redox Transistors
Mohit Kumar, Unjeong Kim, Wanggon Lee, Hyungtak Seo
Abstract
Abstract The pursuit of a universal device that combines nonvolatile multilevel storage, ultrafast writing/erasing speed, nondestructive readout, and embedded processing with low power consumption demands the development of innovative architectures. Although thin‐film transistors and redox‐based resistive‐switching devices have independently been proven to be ideal building blocks for data processing and storage, it is still difficult to achieve both well‐controlled multilevel memory and high‐precision ultrafast processing in a single unit, even though this is essential for the large‐scale hardware implementation of in‐memory computing. In this work, an ultrafast (≈42 ns) and programable redox thin‐film transistor (ReTFT) memory made of a proximity‐oxidation‐grown TiO 2 layer is developed, which has on/off ratio of 10 5 , nonvolatile multilevel analog storage with a long retention time, strong durability, and high reliability. Utilizing the proof‐of‐concept ReTFTs, circuits capable of performing fundamental NOT, AND, and OR operations with reconfigurable logic‐in‐memory processing are developed. Further, on‐demand signal memory‐processing operations, like multi‐terminal addressable memory, learning, pattern recognition, and classification, are explored for prospective application in neuromorphic hardware. This device, which operates on a fundamentally different mechanism, presents an alternate solution to the problems associated with the creation of high‐performing in‐memory processing technology.