Photoluminescence from Vacancy‐Containing Defects in GaN

Abstract

Photoluminescence (PL) bands in GaN associated with point defects involving nitrogen or gallium vacancy (V N or V Ga ) are reviewed. The V N ‐containing defects, including the isolated V N and its complexes with acceptors, are often observed in PL from semi‐insulating GaN and are responsible for the green (GL2) and red (the RL2 family) bands. The complexes of the V Ga with hydrogen and oxygen are abundantly formed in n‐type GaN grown by the ammonothermal method. Some of these complexes are responsible for PL bands in the red‐yellow region of the PL spectrum.

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