Quantum Transport in Monolayer α‐CS Field‐Effect Transistors
Shiying Guo, Wenhan Zhou, Hengze Qu, Shengli Zhang, Wenqiang Liu, Gaoyu Liu, Xinyan Xia, Xiufeng Song, Haibo Zeng
Abstract
Abstract 2D puckered materials similar to black phosphorene (BP) have tunable electronic structures, high mobility, and anisotropy, and are expected to become possible candidate channels for post‐silicon field‐effect transistors (FETs). Herein, monolayer α‐CS with puckered structure is evaluated as a promising channel material for sub‐5 nm FETs by using first principle quantum transport simulation. Monolayer α‐CS FETs can satisfy the requirements of the International Technology Roadmap for Semiconductors (ITRS) for high‐performance (HP) and low‐power (LP) applications. The on‐state current can reach 3700 µA µm −1 for HP FET at 5 nm channel length and the on‐off ratio of LP FET is exceeding 10 7 , both superior to those of other 2D channels like BP and InSe. The results suggest that α‐CS as a competitive channel material opens a new avenue for the future electronic technology in the upcoming Internet of Things.