Topological Anderson insulators in two-dimensional non-Hermitian disordered systems
Ling-Zhi Tang, Lingfeng Zhang, Guo-Qing Zhang, Dan-Wei Zhang
Abstract
The interplay among topology, disorder, and non-Hermiticity can induce some exotic topological and localization phenomena. Here we investigate this interplay in a two-dimensional non-Hermitian disordered Chern-insulator model with two typical kinds of non-Hermiticities, the nonreciprocal hopping and on-site gain-and-loss effects. The topological phase diagrams are obtained by numerically calculating two topological invariants in the real space, which are the disorder-averaged open-bulk Chern number and the generalized Bott index, respectively. We reveal that the nonreciprocal hopping (the gain-and-loss effect) can enlarge (reduce) the topological regions and the topological Anderson insulators induced by disorders can exist under both kinds of non-Hermiticities. Furthermore, we study the localization properties of the system in the topologically nontrivial and trivial regions by using the inverse participation ratio and the expansion of single-particle density distribution.