Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature
Junfeng Wang, Fei‐Fei Yan, Qiang Li, Zhenghao Liu, He Liu, Guo‐Ping Guo, Liping Guo, Xiong Zhou, Jin‐Ming Cui, Jian Wang, Zong-Quan Zhou, Xiao-Ye Xu, Jin‐Shi Xu, Chuan‐Feng Li, Guang-Can Guo
Abstract
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration sixfold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature, and the coherence time T_{2} can be reached to around 17.1 μs. Furthermore, an investigation of fluorescence properties of single NV centers shows that they are room-temperature photostable single-photon sources at telecom range. Taking advantage of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.