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Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self Controllable Voltage Level Technique

T. Santosh Kumar, Suman Lata Tripathi

2020Wireless Personal Communications35 citationsDOI

Topics & Concepts

Leakage powerLeakage (economics)Static random-access memoryCMOSVoltageComputer scienceElectrical engineeringThreshold voltageElectronic engineeringMaterials scienceTransistorEngineeringEconomicsMacroeconomicsLow-power high-performance VLSI designAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices
Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self Controllable Voltage Level Technique | Litcius