A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor
Sijie Wu, Chengyu Liang, Jiaxu Zhang, Zhou Wu, Xiao‐Li Wang, Rui Zhou, Yaxing Wang, Shuao Wang, Dong‐Sheng Li, Tao Wu
Abstract
Abstract A wide range of tunability in the physical parameters of a semiconductor used for X‐ray detection is desirable to achieve targeted performance optimization. However, in a dense‐phase semiconductor, fine‐tuning one parameter often leads to unwanted changes in other parameters. Herein, the intrinsic openness in an open‐framework semiconductor has been confirmed, for the first time, to be a key structural factor that weakens the mutual exclusivity of the adjustable physical parameters owing to a non‐linear control mechanism. The controllable doping of S in a zeolitic In–Se host results in an optimal balance between resistivity, band gap, and carrier mobility, which finally results in an excellent X‐ray detector with a high figure of merit for the mobility–lifetime product (7.12×10 −4 cm 2 V −1 ); this value is superior to that of a commercial α‐Se detector. The current strategy of choosing open‐framework semiconductor materials opens a new window for targeting high‐performance X‐ray detection.