Superior Thermal Dissipation in Graphene Electronic Device Through Novel Heat Path by Electron-Phonon Coupling
Ying Zhang, Yaping Yan, Jie Guo, Tingyu Lu, Jùn Líu, Jun Zhou, Xiangfan Xu
Abstract
Interfacial thermal resistance (ITR) plays an important role in thermal dissipation across different materials and it has been widely investigated in recent years. In this work, we measured the relative change of the ITR between metal and aluminum oxide treated with O 2 -plasma. Significant reduction of ITR is observed. The measured data shows that plasma treatment induces an order of magnitude decrease of ITR, which is mainly attributed to the direct electron-phonon coupling across the interface. Scanning thermal microscopy technique measurement of graphene electronic devices on aluminum oxide gave direct evidence for heat dissipation applications by tuning the surface charge carries concentration.