High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose
Xinzhe Du, Zhen Luo, Shengchun Shen, Weiping Bai, Hui Gan, Yuewei Yin, Xiaoguang Li
Topics & Concepts
Materials scienceDielectricCapacitorHigh-κ dielectricAtomic layer depositionDramOptoelectronicsEquivalent oxide thicknessAnnealing (glass)Dynamic random-access memoryTinThin filmLeakage (economics)NanotechnologyElectrical engineeringComposite materialVoltageGate oxideMetallurgyTransistorEngineeringSemiconductor memoryMacroeconomicsEconomicsFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials