Fully Textured, Production‐Line Compatible Monolithic Perovskite/Silicon Tandem Solar Cells Approaching 29% Efficiency
Lin Mao, Tian Yang, Hao Zhang, Jianhua Shi, Yuchao Hu, Peng Zeng, Faming Li, Jue Gong, Xiaoyu Fang, Yinqing Sun, Xiaochun Liu, Junlin Du, Anjun Han, Liping Zhang, Wenzhu Liu, Fanying Meng, Xudong Cui, Zhengxin Liu, Mingzhen Liu
Abstract
Abstract Perovskite/silicon tandem solar cells are promising avenues for achieving high‐performance photovoltaics with low costs. However, the highest certified efficiency of perovskite/silicon tandem devices based on economically matured silicon heterojunction technology (SHJ) with fully textured wafer is only 25.2% due to incompatibility between the limitation of fabrication technology which is not compatible with the production‐line silicon wafer. Here, a molecular‐level nanotechnology is developed by designing NiO x /2PACz ([2‐(9H‐carbazol‐9‐yl) ethyl]phosphonic acid) as an ultrathin hybrid hole transport layer (HTL) above indium tin oxide (ITO) recombination junction, to serve as a vital pivot for achieving a conformal deposition of high‐quality perovskite layer on top. The NiO x interlayer facilitates a uniform self‐assembly of 2PACz molecules onto the fully textured surface, thus avoiding direct contact between ITO and perovskite top‐cell for a minimal shunt loss. As a result of such interfacial engineering, the fully textured perovskite/silicon tandem cells obtain a certified efficiency of 28.84% on a 1.2‐cm 2 masked area, which is the highest performance to date based on the fully textured, production‐line compatible SHJ. This work advances commercially promising photovoltaics with high performance and low costs by adopting a meticulously designed HTL/perovskite interface.