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Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs

Alessandro Borghese, Michele Riccio, Giorgia Longobardi, Luca Maresca, Giovanni Breglio, Andrea Irace

2020Microelectronics Reliability16 citationsDOI

Topics & Concepts

SpiceLeakage (economics)Materials scienceOptoelectronicsGate voltageElectronic engineeringGate driverVoltageElectrical engineeringEngineeringTransistorEconomicsMacroeconomicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesAdvancements in Semiconductor Devices and Circuit Design
Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs | Litcius