Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Topics & Concepts
Neuromorphic engineeringMemristorMaterials scienceResistive random-access memoryMemistorTinReset (finance)OptoelectronicsNon-volatile memoryVoltageComputer scienceSynapseNanotechnologyElectronic engineeringElectrical engineeringArtificial neural networkArtificial intelligenceEngineeringNeuroscienceBiologyMetallurgyFinancial economicsEconomicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering