Hysteresis in graphene nanoribbon field-effect devices
Alexander Tries, Nils Richter, Zongping Chen, Akimitsu Narita, Kläus Müllen, Hai I. Wang, Mischa Bonn, Mathias Kläui
Abstract
layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.
Topics & Concepts
HysteresisGrapheneMaterials scienceCondensed matter physicsField (mathematics)NanotechnologyEngineering physicsPhysicsMathematicsPure mathematicsGraphene research and applicationsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design