GaN Single Nanowire p–i–n Diode for High-Temperature Operations
Xinbo Zou, Xu Zhang, Yu Zhang, Qifeng Lyu, Chak Wah Tang, Kei May Lau
Abstract
III-Nitride single nanowire (NW)-based p–i–n diode was fabricated using a top–down etching method and its electrical and optoelectronic characteristics were investigated from room temperature to high operation temperatures up to 150 °C. The NW p–i–n diode exhibited good rectifying I–V properties at all measurement temperatures and the forward current could be further enhanced when the temperature was increased. Simulation-based data fitting revealed that the enhanced conduction was a result of increased carrier concentration inside the NW, especially holes in the drift layer, as well as reduced contact resistance. The reverse leakage current was kept low even at elevated temperatures so that the UV (∼365 nm) responsivity remained high for a wide temperature range, suggesting the feasibility of NW p–i–n diode for rectifying purposes and UV photon detection applications in high-temperature environments.