Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
Chowdam Venkata Prasad, Joon Hui Park, Ji Young Min, Wonjin Song, Madani Labed, Yusup Jung, Sinsu Kyoung, Sangmo Kim, Nouredine Sengouga, You Seung Rim
Topics & Concepts
Materials scienceOhmic contactHeterojunctionSchottky barrierSchottky diodeDiodeOxideReverse leakage currentX-ray photoelectron spectroscopyAnalytical Chemistry (journal)OptoelectronicsEquivalent series resistanceLeakage (economics)SputteringThin filmVoltageNanotechnologyNuclear magnetic resonanceElectrical engineeringChemistryEngineeringLayer (electronics)PhysicsMacroeconomicsChromatographyEconomicsMetallurgyGa2O3 and related materialsZnO doping and propertiesSemiconductor materials and devices