Cryogenic HfO<i>ₓ</i>-Based Resistive Memory With a Thermal Enhancement Capping Layer
Zhenqi Hao, Bin Gao, Minghong Xu, Qi Hu, Wenbin Zhang, Xinyi Li, Fangyuan Sun, Jianshi Tang, He Qian, Huaqiang Wu
Abstract
Memory devices for low-temperature electronics have great application potential in emerging fields like quantum computing, deep-space exploration etc. However, the practical non-volatile memory device for cryogenic use still remains as a challenge today. We propose a delicately designed resistive memory device with bi-layer structure. The resistive switching layer is covered by a thermal enhancement capping layer which confines the Joule heat for better switching performance and also serves as an oxygen vacancy reservoir. This structure gives the device the multilevel resistive switching capability within a large temperature range from 8 K to 300 K. The endurance more than $10^{{6}}$ cycles at 8 K is demonstrated. Combined with kinetic Monte-Carlo simulation, the role of the thermal enhancement capping layer is analyzed.