A High-Power GaAs Amplifier With Coupled Bonding-Wires-Based Harmonic Control Output Matching Network
Mingyun Liu, Zonglin Ma, Kaixue Ma, Haipeng Fu
Abstract
This letter presents a 2.45 GHz power amplifier (PA) with coupled bonding-wires-based harmonic control output matching network (OMN) using gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) technology. The proposed four-mutual coupled bonding-wires tune the impedance of the second harmonic to improve the efficiency of PA and achieve the low-loss matching of the fundamental impedance. In addition, the model of the coupled bonding-wires is analyzed in detail mathematically and numerically to optimize the output matching. Based on the proposed harmonic control OMN with four-coupled bonding-wires, a three-stage PA is designed and fabricated, achieving a power-added efficiency (PAE) of 37.5% with a 32.8 dBm saturated power ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P} _{\mathbf {SAT}}$ </tex-math></inline-formula> ). For a 20 MHz 64-QAM signal, the measured error vector magnitude (EVM) is 3.15% with 16.4 dBm average output power.