Improving the photoelectrical characteristics of self-powered p-GaN film/n-ZnO nanowires heterojunction ultraviolet photodetectors through gallium and indium co-doping
Chien‐Yie Tsay, I-Ping Hsiao, Fong-Yi Chang, Cheng‐Liang Hsu
Topics & Concepts
Materials scienceWurtzite crystal structureHeterojunctionNanowireOptoelectronicsDopingUltravioletPhotodetectorIndiumPhotoluminescenceScanning electron microscopeIndium gallium nitrideGallium nitrideNanotechnologyZincLayer (electronics)Composite materialMetallurgyZnO doping and propertiesGa2O3 and related materialsGaN-based semiconductor devices and materials