Vertical GaN devices: Process and reliability
Shuzhen You, Karen Geens, Matteo Borga, Hu Liang, H. Hahn, Dirk Fahle, M. Heuken, Kalparupa Mukherjee, Carlo De Santi, Matteo Meneghini, Enrico Zanoni, Martin Berg, P. Ramvall, Ashutosh Kumar, Mikael Björk, B. Jonas Ohlsson, Stefaan Decoutere
Topics & Concepts
Materials scienceOptoelectronicsTransistorReliability (semiconductor)Robustness (evolution)DiodePower semiconductor deviceCMOSEpitaxyGallium nitrideEngineering physicsElectronic engineeringElectrical engineeringNanotechnologyPower (physics)EngineeringVoltagePhysicsLayer (electronics)GeneBiochemistryChemistryQuantum mechanicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesGa2O3 and related materials