Color centers in wide-bandgap semiconductors for subdiffraction imaging: a review
Stefania Castelletto, Alberto Boretti
Abstract
Solid-state atomic-sized color centers in wide-bandgap semiconductors, such as diamond, silicon carbide, and hexagonal boron nitride, are important platforms for quantum technologies, specifically for single-photon sources and quantum sensing. One of the emerging applications of these quantum emitters is subdiffraction imaging. This capability is provided by the specific photophysical properties of color centers, such as high dipole moments, photostability, and a variety of spectral ranges of the emitters with associated optical and microwave control of their quantum states. We review applications of color centers in traditional super-resolution microscopy and quantum imaging methods, and compare relative performance. The current state and perspectives of their applications in biomedical, chemistry, and material science imaging are outlined.