Highly efficient 9xx-nm band single emitter laser diodes optimized for high output power operation
Yuji Yamagata, Yoshikazu Kaifuchi, Ryozaburo Nogawa, Kyohei Yoshida, Rintaro Morohashi, Masayuki Yamaguchi
Abstract
We report the highest power conversion efficiency (PCE) of 74.6% at peak and more than 70% PCE maintained up to high output power of 20W in broad stripe laser diodes (LDs) lasing at a 9xx-nm band. Optimal layer structure design including enhancement of asymmetry in waveguide structure and elimination of nonlinear resistance due to band discontinuity enables electric resistance to be reduced by 33% compared to conventional LDs without notable increase in optical internal loss. These PCE values from middle to high output power range marks the highest record reported so far.
Topics & Concepts
Materials scienceOptoelectronicsDiodeLasing thresholdCommon emitterLaserEnergy conversion efficiencyElectricity generationOpticsDiscontinuity (linguistics)Slope efficiencySemiconductor laser theoryLaser diodePower (physics)PhysicsWavelengthFiber laserMathematical analysisQuantum mechanicsMathematicsPhotonic and Optical DevicesSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and Devices