Amorphous Oxide Semiconductors for Monolithic 3D Integrated Circuits
Suman Datta, Eknath Sarkar, Khandker Akif Aabrar, Shaozhi Deng, Jaemin Shin, Arijit Raychowdhury, Shimeng Yu, Asif Islam Khan
Abstract
AOS FETs, with low leakage current, satisfactory carrier mobility and BEOL compatibility can enable dense memory on top of CMOS. Redesigned AOS FETs with high breakdown voltage can support efficient power delivery solutions. Such versatility positions AOS FETs to meet the evolving demands of heterogeneous compute, reshaping the technology landscape of memory and power delivery.
Topics & Concepts
Amorphous semiconductorsMaterials scienceIntegrated circuitAmorphous solidOptoelectronicsSemiconductorElectronic circuitOxideEngineering physicsSiliconElectrical engineeringEngineeringChemistryMetallurgyCrystallographyAdditive Manufacturing and 3D Printing TechnologiesPigment Synthesis and PropertiesThin-Film Transistor Technologies