Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors
Miroslav Bartošík, Jindřich Mach, Jakub Piastek, David Nezval, Martin Konečný, Vojtěch Švarc, K. Ensslin, Tomáš Šikola
Abstract
Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.
Topics & Concepts
HysteresisGrapheneMaterials scienceTransistorField-effect transistorOptoelectronicsTrappingElectronNanotechnologyGate voltageBiosensorVoltageRelative humidityCondensed matter physicsElectrical engineeringPhysicsEngineeringThermodynamicsEcologyQuantum mechanicsBiologyGraphene research and applicationsAdvanced Memory and Neural ComputingAdvancements in Semiconductor Devices and Circuit Design