Ultrafast Photodetector by Integrating Perovskite Directly on Silicon Wafer
Xiangshun Geng, Fangwei Wang, He Tian, Qixin Feng, Hainan Zhang, Renrong Liang, Yang Shen, Zhen‐Yi Ju, Guangyang Gou, Ningqin Deng, Yutao Li, Junfeng Ren, Dan Xie, Yi Yang, Tian‐Ling Ren
Abstract
Single-crystal (SC) perovskite is currently a promising material due to its high quantum efficiency and long diffusion length. However, the reported perovskite photodetection range (<800 nm) and response time (>10 μs) are still limited. Here, to promote the development of perovskite-integrated optoelectronic devices, this work demonstrates wider photodetection range and shorter response time perovskite photodetector by integrating the SC CH3NH3PbBr3 (MAPbBr3) perovskite on silicon (Si). The Si/MAPbBr3 heterojunction photodetector with an improved interface exhibits high-speed, broad-spectrum, and long-term stability performances. To the best of our knowledge, the measured detectable spectrum (405–1064 nm) largely expands the widest response range reported in previous perovskite-based photodetectors. In addition, the rise time is as fast as 520 ns, which is comparable to that of commercial germanium photodetectors. Moreover, the Si/MAPbBr3 device can maintain excellent photocurrent performance for up to 3 months. Furthermore, typical gray scale face imaging is realized by scanning the Si/MAPbBr3 single-pixel photodetector. This work using an ultrafast photodetector by directly integrating perovskite on Si can promote advances in next-generation integrated optoelectronic technology.