High-performance β-Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector
Xiaoyu Zhang, Ling Wang, Xudong Wang, Yan Chen, Qianqian Shao, Guangjian Wu, Ding Wang, Tie Lin, Hong Shen, Jianlu Wang, Xiangjian Meng, Junhao Chu
Abstract
Gallium oxide (Ga 2 O 3 ) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga 2 O 3 films by pulsed laser deposition. β-Ga 2 O 3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga 2 O 3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga 2 O 3 in the field of UV detection.