Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator
Yang Wang, Binbin Liu, Yue-Xin Huang, Sivakumar Vishnuvardhan Mambakkam, Yong Wang, Shengyuan A. Yang, Xian‐Lei Sheng, Stephanie Law, John Q. Xiao
Abstract
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ films decorated with transition-metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.