An insight into structural, electronic and optical characteristics of Mo1-xMxO3 (M = Zr, Y, ZrY) for the formation of conducting filaments in optoelectronic memory devices: A first principles study
Ejaz Ahmad Khera, Umbreen Rasheed, Muhammad Imran, Hafeez Ullah, Fayyaz Hussain, R.M. Arif Khalil, Farhana Kousar, Muhammad Qasim
Topics & Concepts
Materials scienceOptoelectronicsComputer scienceEngineering physicsPhysicsAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsElectronic and Structural Properties of Oxides