Modulating trap properties by Nd<sup>3+</sup>- Eu<sup>3+</sup> co-doping in Sr<sub>2</sub>SnO<sub>4</sub> host for optical information storage
Caiyan Wang, Zhehan Zheng, Ying Zhang, Qian Liu, Mingxue Deng, Xiaoke Xu, Zhenzhen Zhou, Huan He
Abstract
We report a novel Nd 3+ and Eu 3+ co-doped Sr 2 SnO 4 (SSONE) phosphor showing the capability of “write-in” and “read-out” in optical information storage. As-prepared phosphors exhibit a dominant emission (PL) band centered at 596 nm under UV excitation, closely identical with its photo-stimulated luminescence (PSL) spectrum center (595 nm) upon near-infrared (NIR) light and thermal-stimulated luminescence (TSL) spectrum center (595 nm) under heat source. Remarkably, compared with Eu 3+ single-doped phosphors, the co-doping strategy enhances the deep traps and also separates the deep traps with shallow traps, which are very crucial factors for optical information storage in electron trapping materials. Further, a demonstration confirmed the optical information storage capacity by photo- and thermal-stimulating the prepared phosphors filled in the designed patterns.