n-type Sn substitution in amorphous IGZO film by sol-gel method: A promoter of hall mobility up to 65 cm2/V•s
Tien-Tzu Yang, Dong–Hau Kuo, Kai‐Ping Tang
Topics & Concepts
X-ray photoelectron spectroscopyAmorphous solidMaterials scienceThin filmAnalytical Chemistry (journal)Band gapElectron mobilityTransmittanceDopingSubstrate (aquarium)Spin coatingCrystallographyNanotechnologyChemistryChemical engineeringOptoelectronicsGeologyOceanographyEngineeringChromatographyThin-Film Transistor TechnologiesTransition Metal Oxide NanomaterialsZnO doping and properties