Polycrystalline Er-doped Y<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> nanofilms fabricated by atomic layer deposition on silicon at a low temperature and the exploration on electroluminescence performance
Zhimin Yu, Kang Yuan, Yang Yang, Jiaming Sun
Abstract
ions in polycrystalline YGG nanofilms by energetic electrons, the conduction mechanism of which is confirmed to be the Poole-Frenkel mode. These prototype devices possess excellent stability and can operate for up to 49 hours under continuous current injection, verifying the improvement of device performance by the utilization of gallium in the fabrication of garnet nanofilms. The Si-based YGG:Er EL devices are of promising potential for integrated optoelectronic applications.
Topics & Concepts
Materials scienceElectroluminescenceDopingCrystalliteAnnealing (glass)OptoelectronicsSiliconAtomic layer depositionGalliumPolycrystalline siliconCrystallizationFabricationAnalytical Chemistry (journal)NanotechnologyLayer (electronics)Chemical engineeringComposite materialMetallurgyChemistryAlternative medicinePathologyChromatographyMedicineEngineeringThin-film transistorSilicon Nanostructures and PhotoluminescenceSemiconductor materials and devicesGa2O3 and related materials