Experimental demonstration of GaN IMPATT diode at X-band
Seiya Kawasaki, Yuto Ando, Manato Deki, Hirotaka Watanabe, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Manabu Arai, Hiroshi Amano
Abstract
Abstract We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p + –n simple abrupt junction and vertical mesa termination. The reverse I – V characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of ∼56 mW.
Topics & Concepts
IMPATT diodeDiodeOptoelectronicsMicrowaveMaterials scienceOscillation (cell signaling)Avalanche diodeAvalanche breakdownSingle-photon avalanche diodeBackward diodeBreakdown voltageOpticsVoltageElectrical engineeringPhysicsChemistryDetectorAvalanche photodiodeSchottky diodeEngineeringBiochemistryQuantum mechanicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesRadio Frequency Integrated Circuit Design