Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors
Jina Bak, Seunggyu Kim, Kyumin Park, Jeechan Yoon, Mino Yang, Un Jeong Kim, Hideo Hosono, Jihyang Park, Bolim You, Ojun Kwon, Byungjin Cho, Sang‐Won Park, Myung Gwan Hahm, Moonsang Lee
Abstract
While two-dimensional (2D) materials possess the desirable future of neuromorphic computing platforms, unstable charging and de-trapping processes, which are inherited from uncontrollable states, such as the interface trap between nanocrystals and dielectric layers, can deteriorate the synaptic plasticity in field-effect transistors. Here, we report a facile and effective strategy to promote artificial synaptic devices by providing physical doping in 2D transition-metal dichalcogenide nanomaterials. Our experiments demonstrate that the introduction of niobium (Nb) into 2D WSe 2 nanomaterials produces charge trap levels in the band gap and retards the decay of the trapped charges, thereby accelerating the artificial synaptic plasticity by encouraging improved short-/long-term plasticity, increased multilevel states, lower power consumption, and better symmetry and asymmetry ratios. Density functional theory calculations also proved that the addition of Nb to 2D WSe 2 generates defect tolerance levels, thereby governing the charging and de-trapping mechanisms of the synaptic devices. Physically doped electronic synapses are expected to be a promising strategy for the development of bioinspired artificial electronic devices.