Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
Chengxuan Cai, Shengsheng Wei, Zhipeng Yin, Jiao Bai, Weiwei Xie, Yue Li, Fuwen Qin, Yan Su, Dejun Wang
Topics & Concepts
DopantResistive random-access memoryDopingMaterials scienceOxygenChemical physicsOptoelectronicsNanotechnologyCondensed matter physicsChemistryElectrodePhysical chemistryPhysicsOrganic chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesElectronic and Structural Properties of Oxides