Effects of Temperature on the Performance of Hf₀.₅Zr₀.₅O₂-Based Negative Capacitance FETs
Chengxu Wang, Jibao Wu, Hao Yu, Genquan Han, Xiangshui Miao, Xingsheng Wang
Abstract
There arises the growing interest of negative capacitance field effect transistors (NCFETs) for low-power applications, however, temperature as an inevitable influencing factor, its effects on NCFETs require more research for practical applications. In this work, we fabricated Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) based NC p-channel FETs and developed a corresponding TCAD simulation deck to study the temperature impact. DC characteristics of NCFETs and its baseline MOSFETs at the common operation temperature range (-50 to 85°C) are measured and simulated. With the increase of temperature, NCFET subthreshold slope (SS) increases much faster than kT/q demonstrating pyroelectric effect, and exceeds kT/q at ~350K and baseline MOSFETs at ~360K. Similarly, its on-current decreases more rapidly than baseline devices. Finally, we explained the temperature characteristics of NCFET with the help of a developed model through Landau-Khalatnikov (L-K) theory and temperature dependent internal gain (A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</sub> ).