Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
Balasubramanian Sundarapandian, Dat Q. Tran, Lutz Kirste, Patrik Straňák, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, T. Paskova, O. Ambacher
Abstract
Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH3) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N2) and N2 + NH3 atmosphere. The study demonstrates that NH3 assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N) ad-atoms in NH3 atmosphere. Consequently, the thermal conductivity and roughness improve by ≈76%, and ≈35%, while the grain size increases by ≈78%.