Surface Wave and Lamb Wave Acoustic Devices on Heterogenous Substrate for 5G Front-Ends
Hongyan Zhou, Shibin Zhang, Zhongxu Li, Kai Huang, Pengcheng Zheng, Jinbo Wu, Chen Shen, Liping Zhang, Tiangui You, Lianghui Zhang, K. Liu, Huarui Sun, Hongtao Xu, Xiaomeng Zhao, Xin Ou
Abstract
We demonstrate groups of surface wave (SH0 mode) and Lamb wave (S0 mode) acoustic devices on lithium niobate thin films on silicon carbide (LNOSiC) heterogeneous substrate. The 4-inch LNOSiC with an excellent thermal transport property is prepared by ion-cutting process. The fabricated acoustic resonators on the LNOSiC substrate show scalable resonances from 2.0 to 4.72 GHz, in which the SH0 (S0) mode resonator shows a $k_t^2$ of 24.1% (15.5%) and a maximum Bode-Q of 976 (577) at 2.54 (3.56) GHz. Moreover, the phase velocity (Vp) of the SH0 (S0) mode is greater than 5000 (6400) m/s, which is about 1.25 (1.6) times higher than that of the conventional SAWs, so as the operating frequency. The filter with a center frequency of 2.62 GHz, an insertion loss (IL) of 1.06 dB, and a 3-dB fractional bandwidth (FBW) of 12.6% (three times larger than that of the conventional SAWs) is also achieved. The acoustic devices on heterogeneous substrate are very promising for high frequency, wideband and high power 5G front-ends.