Phase‐change memory based on matched <scp>Ge‐Te</scp>, <scp>Sb‐Te,</scp> and <scp>In‐Te</scp> octahedrons: Improved electrical performances and robust thermal stability
Ruobing Wang, Zhitang Song, Wenxiong Song, Tianjiao Xin, Shilong Lv, Sannian Song, Jun Liu
Abstract
Abstract Phase‐change memory (PCM) has been developed for three‐dimensional (3D) data storage devices, posing huge challenges to the thermal stability and reliability of PCM. However, the low thermal stability of Ge 2 Sb 2 Te 5 (GST) limits further application. Here, we demonstrate PCM based on In 0.9 Ge 2 Sb 2 Te 5 (IGST) alloy, showing 180°C 10‐years data retention, 6 ns set speed, one order of magnitude longer life time, and 75% reduced power consumption compared to GST‐based device. The In can occupy the cationic positions and the In‐Te octahedrons with good phase‐change properties can geometrically match well with the host Ge‐Te and Sb‐Te octahedrons, acting as nucleation centers to boost the set speed and enhance the endurance of IGST device. Introducing stable matched phase‐change octahedrons can be a feasible way to achieve practical PCMs. image